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 BAT 62-03W Silicon Schottky Diode
* Low Barrier diode for detectors up to GHz frequencies
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1028 Pin Configuration 1=A 2=C Package SOD-323 BAT 62-03W L Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Total power dissipation Thermal Resistance Junction ambient
1)
Symbol
Values 40 40 150 - 55 ... + 150 100
Unit V mA C mW
VR IF Tj Tstg TS 85C Ptot
RthJA RthJS
650 810
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Mar-07-1996
BAT 62-03W
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
0.58 10
A V 1
VR = 40 V, TA = 25 C
Forward voltage
VF
IF = 2 mA
AC Characteristics Diode capacitance
CT
0.35 0.1 225 2 0.6 -
pF
VR = 0 , f = 1 MHz
Case capacitance
CC
-
f = 1 MHz
Differential resistance
R0
-
k nH
VR = 0 , f = 10 kHz
Series inductance chip to ground
Ls
Semiconductor Group
2
Mar-07-1996
BAT 62-03W
Forward current IF = f (VF) TA = parameter
Leakage current IR = f (VR) TA = Parameter
10 4
10 3 uA
uA
IF
10 3
IR TA = 25C TA = 85C TA = 125C TA = -40C
10 2
TA = 125C
TA = 85C 10
1
10 2 10 0 TA = 25C
10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V VF
2.0
10 -1 0
5
10
15
20
25
30
V VR
40
Diode capacitance CT = f (VR) f = 1MHz
Rectifier voltage V0 = f (Vi) f = 900MHz RL = parameter in
10 4 mV 10 3
0.5
CT
pF
VA
10 2
0.3
10 1
10 0 0.2 10 -1 0.1 10 -2
RL=5k RL=20k RL=100k RL=200k RL=1M
0.0 0 5 10 15 20 V 30
10 -3 0 10
10
1
10
2
10
3
VR
mV VE
Semiconductor Group
3
Mar-07-1996
BAT 62-03W
Package
Semiconductor Group
4
Mar-07-1996


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